Last edited by Kagalkree
Sunday, May 17, 2020 | History

10 edition of Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications found in the catalog.

Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications

by Takayasu Sakurai

  • 179 Want to read
  • 31 Currently reading

Published by Springer .
Written in English


The Physical Object
Number of Pages411
ID Numbers
Open LibraryOL7445153M
ISBN 100387292179
ISBN 109780387292175

These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano 5/5(1). The improved immunity of FD SOI technology against short-channel effects has been shown to offer a great interest for subthreshold logic in terms of delay and energy per operation at medium throughputs ( Op/s). Moreover, the combination of an undoped channel with a metal gate extends this benefit to lower throughputs by a reduction of the minimum functional .

  Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow.". Silicon-on-Insulator (SOI) Complementary Metal Oxide Semiconductor (CMOS) Circuits for Ultralow Power (ULP) Applications View Section, 3D Integration of Silicon-on-Insulator (SOI) Integrated Circuits (ICs) for Improved Performance.

Find a huge variety of new & used Low voltage systems books online including bestsellers & rare titles at the best prices. Shop Low voltage systems books at Alibris. The book MOS Devices for Low-Voltage and Low-Energy Applications explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted.


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Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications by Takayasu Sakurai Download PDF EPUB FB2

Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications. Authors (view affiliations) Takayasu Sakurai; Bluetooth MTCMOS VLSI battery-less application consumption fully-depleted SOI green-energy use integrated circuit metal oxide semiconductur field-effect transistor microprocessor mixed digital-analog circuit.

Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications. Authors: Sakurai, Takayasu, Matsuzawa, Akira, Douseki, Takakuni Free Preview. Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of V.

The topics include the minimum required knowledge of the fabrication of SOI substrates; FD Cited by: Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and.

Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of by: book gives three examples of ultralow- power applications based on FD-SOI technology, providing every reader with practical knowledge on the technology and the circuits.

We hope that this book will further the understanding of FD- SOI technology and ultralow- voltage circuit techniques for FD- SOI Size: 1MB.

Completely-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the difficulty of reducing the supply voltage of typical circuits for ultralow-power operation and explains power-setting pleasant MTCMOS circuit design for FD-SOI devices at a present voltage of zero.5 V.

Find many great new & used options and get the best deals for Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications by Akira Matsuzawa, Takakuni Douseki and Takayasu Sakurai (, Hardcover) at the best online prices at. Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at.

Get this from a library. Fully-depleted SOI CMOS circuits and technology for ultralow-power applications. [Takayasu Sakurai; Akira Matsuzawa; Takakuni Douseki] -- "The most important issue confronting CMOS technology is the power explosion of chips arising from the scaling law. Fully-depleted (FD) SOI technology provides a promising low-power solution to chip.

These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano.

The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits.

Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications Takayasu Sakurai, Akira Matsuzawa, Takakuni Douseki Springer, - Computers - pages.

Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of V.

The topics include the minimum required knowledge of the fabrication of SOI Reviews: 1. SOI CMOS device and circuit technologies operating at low voltages dedicated for ultralow power applications are reviewed.

It is important to improve energy efficiency while maintaining an acceptable speed performance in ultralow power applications for long-life battery operation, or using harvested : N.

Sugii. Fully-Depleted SOI CMOS circuits and technology: For ultralow-power applications Sakurai, T Book/Report › Book. Networks (circuits) Electric potential A magnetic flowmeter with conducting pipe wall for expanded field of applications. Yamasaki, H., Honda, S., Chin, T.

& Akiyama, C., Jan 1, Akademiai Kiado. Research. Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications by Takayasu Sakurai, Akira Matsuzawa, Takakuni Douseki.

Springer. SOI is also used for power integrated circuits, micro-electromechanical systems (MEMS), integrated optics and high temperature applications.

SOI offers numerous opportunities and challenges in the design of low-voltage and low-power CMOS circuits for. Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications by Sakurai, Takayasu; Matsuzawa, Akira; Douseki, Takakuni and a great selection of related books, art and collectibles available now at The most important issue confronting CMOS technology is the power explosion of chips arising from the scaling law.

Fully-depleted (FD) SOI technology provides a promising low-power solution to chip implementation. Ultralow-power VLSIs, which have a power consumption of less than 10 mW, will be key components of terminals in the.

Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of V.Abstract.

This last decade Silicon-on-Insulator (SOI) MOSFET technology has demonstrated its potentialities for high frequency (reaching cut-off frequencies close to GHz for nMOSFETs) and for harsh environments (high temperature, radiation) commercial : Jean-Pierre Raskin.These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits.

Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano Brand: O Kononchuk; B -Y Nguyen.